{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360021393781037952.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/aelm.201800854"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faelm.201800854"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800854"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.201800854"}},{"identifier":{"@type":"URI","@value":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800854"}}],"dc:title":[{"@value":"Recent Advances of Quantum Conductance in Memristors"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>Memristors with the filamentary switching mechanism have been acknowledged as a leading candidate for next‐generation nonvolatile memory applications, primarily due to their excellent downscaling potential, fast operation speed, low power consumption, and high switching endurance. In particular, room‐temperature quantum conductance effect can emerge as the size of the conducting filaments is reduced down to atomic scale, offering great opportunities for the physical understanding of memristive switching phenomena and the realization of ultrahigh‐density storage, logic‐in‐memory circuits, atomic scale photodetectors, and etc. This review presents a timely and comprehensive summary of the recent advances in quantum conductance in memristors. After a brief description on the evolution dynamics of conducting filaments, the experimental phenomena, theoretical understanding, effective control, and promising applications of quantum conductance in memristors are summarized and discussed in detail. Finally, current challenges and future prospects concerning quantum conductance in memristors are presented.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380021393781037956","@type":"Researcher","foaf:name":[{"@value":"Wuhong Xue"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University  Linfen Shanxi 041004 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380021393781037955","@type":"Researcher","foaf:name":[{"@value":"Shuang Gao"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380021393781037953","@type":"Researcher","foaf:name":[{"@value":"Jie Shang"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380021393781037957","@type":"Researcher","foaf:name":[{"@value":"Xiaohui Yi"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380021393781037952","@type":"Researcher","foaf:name":[{"@value":"Gang Liu"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380021393781037954","@type":"Researcher","foaf:name":[{"@value":"Run‐Wei Li"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"},{"@value":"Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo Zhejiang 315201 China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"2199160X"},{"@type":"EISSN","@value":"2199160X"}],"prism:publicationName":[{"@value":"Advanced Electronic Materials"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2019-02-05","prism:volume":"5","prism:number":"9","prism:startingPage":"1800854"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faelm.201800854"},{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800854"},{"@id":"https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.201800854"},{"@id":"https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800854"}],"createdAt":"2019-02-05","modifiedAt":"2025-10-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360017288295930624","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Atomic scale switches based on solid state ionics"}]},{"@id":"https://cir.nii.ac.jp/crid/1360584339766597376","@type":"Article","resourceType":"学術雑誌論文(journal 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