Non-covalent doping of graphitic carbon nitride polymer with graphene: controlled electronic structure and enhanced optoelectronic conversion

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Published
2011
Resource Type
journal article
DOI
  • 10.1039/c1ee01400e
Publisher
Royal Society of Chemistry (RSC)

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Description

By union of graphitic carbon nitride polymer with reduced graphene oxide (rGO, ≤1 wt%) via π–π stacking interaction, the band structure of carbon nitride could be well modulated. As a result, a significant increase of photocurrent was observed (e.g., when biased at 0.4 V vs.Ag/AgCl, the anodic photocurrent became 300% higher after doping). Not merely interesting in itself, graphene was also used as a general dopant for semiconductors in band-structure engineering.

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