Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility

DOI Web Site Web Site 2 Citations 23 References

Bibliographic Information

Published
1984-06-01
Rights Information
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.23.687
Publisher
IOP Publishing

Search this article

Description

<jats:p> The changes in internal stress and crystallinity in silicon- on-sapphire (SOS), as caused by pulse laser irradiation, were evaluated by Raman spectroscopy. The vertical distributions of the internal stress and the crystallinity in the silicon layer were found to be significantly affected by the number of laser pulses, although the energy density and width of the laser pulses were kept constant. The change in electron Hall mobility due to laser irradiation is discussed in relation to the internal stress and crystallinity of the SOS. An excessive number of pulses causes a reduction in the orientational order of the constituent crystallites in the silicon layer, with a decrease in the electron Hall mobility. </jats:p>

Journal

Citations (2)*help

See more

References(23)*help

See more

Details 詳細情報について

Report a problem

Back to top