Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility

DOI Web Site Web Site 被引用文献2件 参考文献23件

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公開日
1984-06-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.23.687
公開者
IOP Publishing

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説明

<jats:p> The changes in internal stress and crystallinity in silicon- on-sapphire (SOS), as caused by pulse laser irradiation, were evaluated by Raman spectroscopy. The vertical distributions of the internal stress and the crystallinity in the silicon layer were found to be significantly affected by the number of laser pulses, although the energy density and width of the laser pulses were kept constant. The change in electron Hall mobility due to laser irradiation is discussed in relation to the internal stress and crystallinity of the SOS. An excessive number of pulses causes a reduction in the orientational order of the constituent crystallites in the silicon layer, with a decrease in the electron Hall mobility. </jats:p>

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