Intrinsic Gettering of Iron Impurities in Silicon Wafers

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Published
1991-12-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.30.3580
Publisher
IOP Publishing

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<jats:p> We present a new experimental approach to using intrinsic gettering to remove Fe impurities. We annealed samples, followed by quenching, and measured the Fe concentration near the surface using deep-level transient spectroscopy. The supersaturation of Fe impurities is necessary for the intrinsic gettering of Fe. However, for a higher supersaturation, Fe impurities precipitate faster than gettering. The optimum degree of supersaturation is one order of magnitude. Gettering is limited by the reaction of Fe with the oxygen precipitates in the defect region, rather than by Fe diffusion to the defect region. </jats:p>

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