InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy

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Published
2006-10-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.45.8010
Publisher
IOP Publishing

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<jats:p> We report the first demonstration of room-temperature (RT) lasing at 1.3 µm from the ground state of three-stacked InAs quantum dots (QDs) in an In<jats:sub>0.15</jats:sub>Ga<jats:sub>0.85</jats:sub>As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-µm-long × 15-µm-wide ridge structure, the threshold current density (<jats:italic>J</jats:italic> <jats:sub>th</jats:sub>) at RT is 155 A/cm<jats:sup>2</jats:sup> with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310 nm and to the first excited state at 1232 nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski–Krastanov QD-LD. </jats:p>

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