Single-Crystal Growth of Ba<sub>1−</sub><i><sub>x</sub></i>K<i><sub>x</sub></i>Fe<sub>2</sub>As<sub>2</sub> by KAs Self-Flux Method

  • Kunihiro Kihou
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  • Taku Saito
    Department of Physics, Chiba University, Chiba 263-8522, Japan
  • Kay Fujita
    Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara 252-5258, Japan
  • Shigeyuki Ishida
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  • Masamichi Nakajima
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  • Kazumasa Horigane
    Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara 252-5258, Japan
  • Hideto Fukazawa
    Department of Physics, Chiba University, Chiba 263-8522, Japan
  • Yoh Kohori
    Department of Physics, Chiba University, Chiba 263-8522, Japan
  • Shin-ichi Uchida
    Department of Physics, Tokyo University, Bunkyo, Tokyo 113-0033, Japan
  • Jun Akimitsu
    Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara 252-5258, Japan
  • Akira Iyo
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  • Chul-Ho Lee
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  • Hiroshi Eisaki
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

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説明

Single crystals of Ba1−xKxFe2As2 with 0.15 ≤ x ≤ 1 have been successfully synthesized by a KAs self-flux method. The potassium (K) concentration x of the grown crystals was systematically changed by changing the mixing ratio of Ba to Fe in the starting materials. The crystals have flat surfaces corresponding to the crystallographic (001) planes, whose planar dimensions increase with decreasing thickness when x increases. The superconducting transition temperature systematically changes with x, ranging from 38 K at x = 0.4 to 3.4 K at x = 1.0, in good agreement with the results for polycrystalline samples.

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