Examination of phonon deformation potentials for accurate strain measurements in silicon–germanium alloys with the whole composition range by Raman spectroscopy

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Published
2016-01-22
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journal article
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.7567/jjap.55.026602
Publisher
IOP Publishing

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<jats:title>Abstract</jats:title> <jats:p>The phonon deformation potentials (PDPs), <jats:italic>p</jats:italic> and <jats:italic>q</jats:italic>, of Si<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Ge<jats:italic> <jats:sub>x</jats:sub> </jats:italic> with the whole range of the Ge concentration <jats:italic>x</jats:italic> were examined in detail in pursuit of accurate strain measurements by Raman spectroscopy. An oil-immersion Raman technique was adopted to extract the PDPs of Si<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Ge<jats:italic> <jats:sub>x</jats:sub> </jats:italic>, in which a complex sample preparation process or a stress-introduction device is not necessary. The strain-shift coefficients <jats:italic>b</jats:italic> <jats:sub>LO</jats:sub> and <jats:italic>b</jats:italic> <jats:sub>TO</jats:sub>, which can be calculated using the obtained PDPs, were compared with the values in the literature, and we suggested which values were best for application to accurate strain measurements. Ab initio calculation was also performed to understand the behavior of the PDPs throughout the whole range of <jats:italic>x</jats:italic> in Si<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Ge<jats:italic> <jats:sub>x</jats:sub> </jats:italic>.</jats:p>

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