Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1−
 xMgxO3−δ

Akihiro Ikeda, Tanemasa Asano, Li Li

doi:10.7567/jjap.55.06gj05

<jats:title>Abstract</jats:title> <jats:p>We newly propose the use of functional oxide to produce O<jats:sup>*</jats:sup> radicals in an oxidation furnace for the application to oxidation of semiconductor at low temperatures. SrTi<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Mg<jats:italic> <jats:sub>x</jats:sub> </jats:italic>O<jats:sub>3−δ</jats:sub> is prepared and placed together with a Si wafer in an electric furnace to perform oxidation of Si in flowing O<jats:sub>2</jats:sub> under the atmospheric pressure. X-ray diffraction and gas desorption analyses show that SrTi<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Mg<jats:italic> <jats:sub>x</jats:sub> </jats:italic>O<jats:sub>3−δ</jats:sub> contains oxygen vacancies and emits atomic oxygen at temperatures above 400 °C. Growth rate of SiO<jats:sub>2</jats:sub> at the Si surface is shown to be increased by placing SrTi<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Mg<jats:italic> <jats:sub>x</jats:sub> </jats:italic>O<jats:sub>3−δ</jats:sub> with Si and the rate increases with increasing the composition <jats:italic>x</jats:italic> of the oxide. It is also shown that the activation energies of the linear and parabolic rate constants in the Deal–Grove oxidation model is reduced by using SrTi<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>Mg<jats:italic> <jats:sub>x</jats:sub> </jats:italic>O<jats:sub>3−δ</jats:sub> oxidation catalyst.</jats:p>

Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi<sub>1−</sub> <sub>x</sub>Mg<sub>x</sub>O<sub>3−δ</sub>

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