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Doping-type dependence of phonon dephasing dynamics in Si
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- Keiko Kato
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Atsushi Ishizawa
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Katsuya Oguri
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Kouta Tateno
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Takehiko Tawara
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Hideki Gotoh
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Masahiro Kitajima
- National Defense Academy of Japan 2 Department of Applied Physics, School of Applied Science, , Hashirimizu 1-10-20, Yokosuka, Kanagawa 239-8686, Japan
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- Hidetoshi Nakano
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- Tetsuomi Sogawa
- Nippon Telegraph and Telephone Corporation 1 NTT Basic Research Laboratories, , 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Bibliographic Information
- Published
- 2011-04-04
- Resource Type
- journal article
- DOI
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- 10.1063/1.3574533
- Publisher
- AIP Publishing
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Description
<jats:p>We studied the dephasing dynamics of coherent phonons in n-type, p-type, and intrinsic Si using time-resolved reflectivity measurements with sub-10 fs laser pulses. The dephasing time of the coherent phonons increases (decreases) for n-type (p-type) doping compared with that of intrinsic Si, while the frequencies of the coherent phonons exhibit a redshift for both types of doping. These doping-induced changes in the coherent phonon dynamics are observed when the carrier concentration exceeds 1019 cm−3. The doping-type dependent changes in the dephasing time are attributed to the interconduction and intervalence band transitions in n-type and p-type Si, respectively.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 98 (14), 2011-04-04
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360285708871565184
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- ISSN
- 10773118
- 00036951
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- Article Type
- journal article
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- Data Source
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- Crossref
- KAKEN
