Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy

DOI PDF 18 Citations 16 References
  • N. Chinone
    Tohoku University 1 Research Institute of Electrical Communication, , Aoba-ku, Sendai 980-8577, Japan
  • T. Nakamura
    ROHM Co., Ltd. 2 , 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
  • Y. Cho
    Tohoku University 1 Research Institute of Electrical Communication, , Aoba-ku, Sendai 980-8577, Japan

Bibliographic Information

Published
2014-08-27
Resource Type
journal article
DOI
  • 10.1063/1.4893959
Publisher
AIP Publishing

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<jats:p>The dopant distribution and depletion layer in a cross-section of a SiC double diffused MOSFET (DMOSFET) is visualized using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which is a form of scanning probe microscopy. Analysis of the data acquired by SHO-SNDM clarifies the dopant distribution in great detail, which is otherwise difficult to detect using conventional scanning capacitance microscopy or scanning microwave microscopy. Moreover, the newly developed SHO-SNDM method enables us to distinguish the n-type, p-type, and depletion layer regions very clearly, and they are found to be consistent with the general DMOSFET structure.</jats:p>

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