GaAs ∕ AlGaAs nanowires capped with AlGaAs layers on GaAs(311)B substrates

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  • K. Tateno
    NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
  • H. Gotoh
    NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
  • Y. Watanabe
    NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

Bibliographic Information

Published
2004-09-06
DOI
  • 10.1063/1.1789234
Publisher
AIP Publishing

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<jats:p>We have investigated GaAs∕AlGaAs nanowires capped with AlGaAs layers for optical device applications. GaAs nanowires are not so stable during AlGaAs capping growth at high temperature. However, AlGaAs nanowires retain their shapes, and GaAs nanowires sandwiched between AlGaAs wires were capped at temperatures as high as 700°C. The capped structures showed sharp photoluminescence peaks at around 730nm at 4K, which originated from excitons in quantum wires. We confirmed that the AlGaAs capping layers were grown smoothly around nanowires so that surface recombination centers in GaAs nanowires were reduced compared with air-exposed GaAs wires.</jats:p>

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