{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360292619051704448.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1789234"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/85/10/1808/18594693/1808_1_online.pdf"}}],"dc:title":[{"@value":"GaAs\n                ∕\n                AlGaAs\n           nanowires capped with AlGaAs layers on GaAs(311)B substrates"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We have investigated GaAs∕AlGaAs nanowires capped with AlGaAs layers for optical device applications. GaAs nanowires are not so stable during AlGaAs capping growth at high temperature. However, AlGaAs nanowires retain their shapes, and GaAs nanowires sandwiched between AlGaAs wires were capped at temperatures as high as 700°C. The capped structures showed sharp photoluminescence peaks at around 730nm at 4K, which originated from excitons in quantum wires. We confirmed that the AlGaAs capping layers were grown smoothly around nanowires so that surface recombination centers in GaAs nanowires were reduced compared with air-exposed GaAs wires.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380292619051704450","@type":"Researcher","foaf:name":[{"@value":"K. Tateno"}],"jpcoar:affiliationName":[{"@value":"NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380292619051704449","@type":"Researcher","foaf:name":[{"@value":"H. Gotoh"}],"jpcoar:affiliationName":[{"@value":"NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380292619051704448","@type":"Researcher","foaf:name":[{"@value":"Y. Watanabe"}],"jpcoar:affiliationName":[{"@value":"NTT Basic Research Laboratories, NTT corporation , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2004-09-06","prism:volume":"85","prism:number":"10","prism:startingPage":"1808","prism:endingPage":"1810"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/85/10/1808/18594693/1808_1_online.pdf"}],"createdAt":"2004-09-13","modifiedAt":"2024-02-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1390001206457920640","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Arrangement of Catalyst Islands at Surface Atomic Steps toward Position Control of Nanowires"},{"@language":"ja","@value":"「半導体の表面・欠陥・ナノ構造の制御とその物性」ナノワイヤの配列制御に向けた触媒金属の表面原子ステップへの配置"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681241991552","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates"},{"@value":"Nanoholes in InP and C<sub>60</sub> Layers on GaAs Substrates by Using AlGaAs Nanowire Templates"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409441101952","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterization of individual GaAs/AlGaAs self-standing nanowires by cathodoluminescence technique using transmission electron microscope"},{"@language":"ja-Kana","@value":"Characterization of individual GaAs AlGaAs self standing nanowires by cathodoluminescence technique using transmission electron microscope"}]},{"@id":"https://cir.nii.ac.jp/crid/1520572359254508160","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires"},{"@language":"ja-Kana","@value":"Multi Quantum Structures of GaAs AlGaAs Free Standing Nanowires"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853833087920128","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires"},{"@language":"ja-Kana","@value":"Exciton and biexciton emissions from single GaAs quantum dots in Al Ga As nanowires"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1789234"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.2578_references_DOI_HkYkJuz1LvPboBfdQKZmAKR1i8H"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.3568_references_DOI_HkYkJuz1LvPboBfdQKZmAKR1i8H"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.6596_references_DOI_HkYkJuz1LvPboBfdQKZmAKR1i8H"},{"@type":"CROSSREF","@value":"10.1380/jsssj.27.688_references_DOI_HkYkJuz1LvPboBfdQKZmAKR1i8H"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.l428_references_DOI_HkYkJuz1LvPboBfdQKZmAKR1i8H"}]}