著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Kunihiko Iwamoto and Yuuichi Kamimuta and Arito Ogawa and Yukimune Watanabe and Shinji Migita and Wataru Mizubayashi and Yukinori Morita and Masashi Takahashi and Hiroyuki Ota and Toshihide Nabatame and Akira Toriumi,Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface,Applied Physics Letters,0003-6951,AIP Publishing,2008-03-31,92,13,132907,https://cir.nii.ac.jp/crid/1360292619148926848,https://doi.org/10.1063/1.2904650