{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360292620732052224.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1109/jstqe.2002.801675"}},{"identifier":{"@type":"URI","@value":"http://xplorestaging.ieee.org/ielx5/2944/22281/01039475.pdf?arnumber=1039475"}}],"dc:title":[{"@value":"Progress in GaN-based quantum dots for optoelectronics applications"}],"description":[{"notation":[{"@value":"Our recent progress in GaN-based quantum dots (QDs) for optoelectronics application is discussed. First, we discussed an impact of the use of GaN-based QDs on semiconductor lasers, showing theoretically that reduction of threshold current by using the QDs in GaN-based lasers is much more effective compared to those in GaAs-based or InP-based lasers. Then discussed are our growth technology including self-assembling growth of InGaN QDs on sapphire substrates by atmospheric-pressure metalorganic chemical vapor deposition. Using the self-assembling growth technique, we have succeeded in obtaining lasing action in an edge-emitting laser structure with the InGaN QDs embedded in the active layer under optical excitation with the emission wavelength of 410 nm. Toward UV light wavelength emission, we have recently established self-assembled GaN QDs of high quality and high density under very low V-III ratio. We clearly observed two photoluminescence peaks from both the QDs and the wetting layer at room temperature, which clearly shows the nanostructures are formed with the Stranski-Krastanow growth mode."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380292620732052224","@type":"Researcher","foaf:name":[{"@value":"Y. Arakawa"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"1077260X"}],"prism:publicationName":[{"@value":"IEEE Journal of Selected Topics in Quantum Electronics"}],"dc:publisher":[{"@value":"Institute of Electrical and Electronics Engineers (IEEE)"}],"prism:publicationDate":"2002-07","prism:volume":"8","prism:number":"4","prism:startingPage":"823","prism:endingPage":"832"},"reviewed":"false","dc:rights":["https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html"],"url":[{"@id":"http://xplorestaging.ieee.org/ielx5/2944/22281/01039475.pdf?arnumber=1039475"}],"createdAt":"2002-11-21","modifiedAt":"2021-11-29","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360283690979933440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Site-controlled growth of single GaN quantum dots in nanowires by MOCVD"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859351552","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Impact of quantum dots on III-nitride lasers: a theoretical calculation of threshold current densities"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399841033984","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires"}]},{"@id":"https://cir.nii.ac.jp/crid/1360584341827915392","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Lasing properties and carrier dynamics of CsPbBr\n                    <sub>3</sub>\n                    perovskite nanocrystal vertical‐cavity surface‐emitting laser"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206265197056","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1109/jstqe.2002.801675"},{"@type":"OPENAIRE","@value":"doi_dedup___::2b42e00238844760b406b105bb263ad3"},{"@type":"CROSSREF","@value":"10.1515/nanoph-2023-0081_references_DOI_K5c9vMg7uRwAHHB8RIxNyOqD8mq"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.5670_references_DOI_XoxuU21dqc1JhL9p7Ac7ojXLGl4"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.08jl02_references_DOI_XoxuU21dqc1JhL9p7Ac7ojXLGl4"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab1068_references_DOI_XoxuU21dqc1JhL9p7Ac7ojXLGl4"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2012.09.019_references_DOI_XoxuU21dqc1JhL9p7Ac7ojXLGl4"}]}