Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

DOI Web Site 3 Citations
  • Tao Wang
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education
  • Mingsu Si
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education
  • Dezheng Yang
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education
  • Zhong Shi
    The Department of physics
  • Fangcong Wang
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education
  • Zhaolong Yang
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education
  • Shiming Zhou
    The Department of physics
  • Desheng Xue
    The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education

Bibliographic Information

Published
2014
DOI
  • 10.1039/c3nr04077a
Publisher
Royal Society of Chemistry (RSC)

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Description

<p>Anisotropic MR effect is seen in a non-magnetic p–n junction due to the space charge region being modulated by an external magnetic field.</p>

Journal

  • Nanoscale

    Nanoscale 6 (8), 3978-3983, 2014

    Royal Society of Chemistry (RSC)

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