- Integration of CiNii Books functions for fiscal year 2025 has completed
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- 【Updated on November 26, 2025】Regarding the recording of “Research Data” and “Evidence Data”
- Incorporated Jxiv preprints from JaLC and adding coverage from NDL Search
Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing
Bibliographic Information
- Published
- 2021-08-03
- Resource Type
- journal article
- Rights Information
-
- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
-
- 10.1088/1361-6641/ac13af
- Publisher
- IOP Publishing
Search this article
Description
To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular beam epitaxy. The addition of even a small amount of N (less than 1%) to the GaAsBi alloy significantly reduces the short-circuit current density (Jsc) of the solar cell. However, after thermal annealing, Jsc increases by ~6.5 times. After thermal annealing, the GaN0.006As0.966Bi0.028 solar cells (bandgap (Eg) = 1.15 eV) exhibited an open-circuit voltage (Voc) of 0.35 V, Jsc of 10.2 mA/cm2, and fill factor (FF) of 0.56. Based on the Urbach energy of Ga(N)AsBi, the decreased crystallinity associated with the addition of N leads to poor characteristics of GaNAsBi solar cells compared with those GaAsBi solar cells.
Journal
-
- Semiconductor Science and Technology
-
Semiconductor Science and Technology 36 (9), 095020-, 2021-08-03
IOP Publishing
- Tweet
Details 詳細情報について
-
- CRID
- 1360294643818385792
-
- ISSN
- 13616641
- 02681242
-
- Article Type
- journal article
-
- Data Source
-
- Crossref
- KAKEN
- OpenAIRE
