Photoelectrochemical properties of p-type CuBi<sub>2</sub>O<sub>4</sub> prepared by spray pyrolysis of carbon-free precursor aqueous solution combined with post-annealing treatment

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  • Kaisei Wakishima
    Electrical and Electronic Engineering Program, Faculty of Engineering, University of Miyazak, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
  • Tomohiro Higashi
    Institute for Tenure Track Promotion, University of Miyazaki, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
  • Akira Nagaoka
    Electrical and Electronic Engineering Program, Faculty of Engineering, University of Miyazak, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
  • Kenji Yoshino
    Electrical and Electronic Engineering Program, Faculty of Engineering, University of Miyazak, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan

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説明

<jats:p>CuBi<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub> photoelectrodes were fabricated by a spray pyrolysis method using a carbon-free precursor solution. The optimized CuBi<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub> generated a photocurrent of −0.94 mA cm<jats:sup>−2</jats:sup><jats:italic>via</jats:italic> H<jats:sub>2</jats:sub>O<jats:sub>2</jats:sub> reduction at 0.6 V<jats:sub>RHE</jats:sub> under simulated sunlight illumination.</jats:p>

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