High Doping Activation (≥10<sup>20</sup> cm<sup>–3</sup>) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

DOI Web Site 37 References
  • Rahmat Hadi Saputro
    Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • Tatsuro Maeda
    National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan
  • Ryo Matsumura
    Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • Naoki Fukata
    Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • Kaoru Toko
    Graduate School of Science and Technology, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

Bibliographic Information

Published
2024-06-03
Resource Type
journal article
Rights Information
  • https://doi.org/10.15223/policy-029
  • https://doi.org/10.15223/policy-037
  • https://doi.org/10.15223/policy-045
DOI
  • 10.1021/acsaelm.4c00399
Publisher
American Chemical Society (ACS)

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