{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360565166114970240.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.snb.2012.01.020"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925400512000433?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925400512000433?httpAccept=text/plain"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Extension of receptor function theory to include two types of adsorbed oxygen for oxide semiconductor gas sensors"}],"description":[{"notation":[{"@value":"Abstract   Receptor function of oxide semiconductor gas sensors to oxygen and an oxidizing or reducing gas was extended successfully to include two types of adsorbed oxygen, O− and O2−. The receptor function relying on O2− ions is featured by linear dependence of resistance on      P    O  2     1  /  4       (     P    O  2       , partial pressure of oxygen), while that relying O− shows linear dependence on      P    O  2     1  /2    .     As a result, the resistance can be brought to a high value at small      P    O  2        when O2− ions are formed. The drastic increase of resistance in air under desiccated condition can be accounted for as a result of the formation of O2− ions which is blocked by water vapor in humid conditions. On the response to an oxidizing gas (NO2) in air, O2− ions exert an adverse effect; those increase the gross resistance of the device in air, thus reducing the conventionally defined response to the gas. Those influence on the response to a reducing gas (H2) in a particular way. Owing to a kinetic reason, O2− ions are almost distinguished at steady state under exposure to the gas, rendering only O− ions to be responsible for the response to the gas, and thus contributing to amplify the conventionally defined response."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380566394294344065","@type":"Researcher","foaf:name":[{"@value":"Noboru Yamazoe"}]},{"@id":"https://cir.nii.ac.jp/crid/1380566394294344064","@type":"Researcher","foaf:name":[{"@value":"Koichi Suematsu"}]},{"@id":"https://cir.nii.ac.jp/crid/1380566394294344066","@type":"Researcher","foaf:name":[{"@value":"Kengo Shimanoe"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09254005"}],"prism:publicationName":[{"@value":"Sensors and Actuators B: Chemical"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2012-03","prism:volume":"163","prism:number":"1","prism:startingPage":"128","prism:endingPage":"135"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0925400512000433?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0925400512000433?httpAccept=text/plain"}],"createdAt":"2012-01-14","modifiedAt":"2018-11-27","project":[{"@id":"https://cir.nii.ac.jp/crid/1040282257086897280","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"22350064"},{"@type":"JGN","@value":"JP22350064"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22350064/"}],"notation":[{"@language":"ja","@value":"環境計測用マイクロガスセンサの構築に向けた新しい材料設計"},{"@language":"en","@value":"New material design toward development of micro sensors for detection of environment-related gases"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002216161509760","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Explicit formulation for the response of neat oxide semiconductor gas sensor to reducing gas"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002219105550976","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"H2 Sensing Mechanism of Pd-Loaded WO3 Nanoparticle Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283695667354368","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Humid Aging on the Oxygen Adsorption in SnO2 Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285708600350208","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Unexpected gas sensing properties of SiO<sub>2</sub>/SnO<sub>2</sub> core–shell nanofibers under dry and humid conditions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360302864803367552","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Materials Design for High Performance of Metal Oxide Semiconductor Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567186266214016","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Determination of Effective Oxygen Adsorption Species for CO Sensing Based on Electric Properties of Indium Oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567186266772224","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Ambient Oxygen Partial Pressure on the Hydrogen Response of SnO<sub>2</sub> Semiconductor Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360572092816389632","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Double-Step Modulation of the Pulse-Driven Mode for a High-Performance SnO<sub>2</sub> Micro Gas Sensor: Designing the Particle Surface via a Rapid Preheating Process"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574094157030400","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The role of morphology and crystallographic structure of metal oxides in response of conductometric-type gas sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579814668637696","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"MOF-derived Au-NiO/In2O3 for selective and fast detection of toluene at ppb-level in high humid environments"}]},{"@id":"https://cir.nii.ac.jp/crid/1360588380611255424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancement in gas sensing performance of MoO3-loaded SnO2 sensor via improving adsorption and partial oxidation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848656306827136","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Oxygen adsorption on ZrO2-loaded SnO2 gas sensors in humid atmosphere"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855570165712512","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"New perspectives of gas sensor technology"}]},{"@id":"https://cir.nii.ac.jp/crid/1360857593710147712","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Impact of Pd nanoparticle loading method on SnO2 surface for natural gas detection in humid atmosphere"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137044080594048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Basic Aspects and Challenges of Semiconductor Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993910495232","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Receptor Function and Response of Semiconductor Gas Sensor"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825893902734336","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The surface and materials science of tin oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670319094661888","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Roles of Shape and Size of Component Crystals in Semiconductor Gas Sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320812411648","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Stability of the Sensitivity of SnO2- Based Elements in the Field"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795303256064","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Enhanced long-term stability of SnO2-based CO gas sensors modified by sulfuric acid treatment"}]},{"@id":"https://cir.nii.ac.jp/crid/1370850329164896516","@type":"Product","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Influence of water vapor adsorption on the oxygen adsorption properties for semiconductor nanoparticles"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.snb.2012.01.020"},{"@type":"KAKEN","@value":"PRODUCT-13311083"},{"@type":"KAKEN","@value":"PRODUCT-13311104"},{"@type":"OPENAIRE","@value":"doi_dedup___::daa8d554b7555077c3367add083f843e"},{"@type":"CROSSREF","@value":"10.3390/s18010254_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1039/c7tc01642e_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1109/sensors56945.2023.10324989_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1149/2.0591807jes_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1149/2.1391906jes_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1021/acssensors.0c01365_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1016/j.snb.2022.131631_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1016/j.snb.2024.137176_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1007/s10853-018-3020-y_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1007/s10853-021-06214-4_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"},{"@type":"CROSSREF","@value":"10.1246/cl.140396_references_DOI_ETwFJkZ6ZaMS1dM3kRzfJORghBF"}]}