{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360566396791217536.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.21.l639"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.21.L639"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.21.L639/pdf"}},{"identifier":{"@type":"NAID","@value":"210000022258"}}],"dc:title":[{"@value":"GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p> \n A GaInAsP/InP laser (λ=1.3 µm) with a current blocking layer made by Be implantation has been fabricated. Be-ions were implanted with 70 keV into an n-InP substrate at room temperature and 2.2×10<jats:sup>14</jats:sup> cm<jats:sup>-2</jats:sup> of dose. Thermal annealing was applied in a furnace during the LPE (Liquid Phase Epitaxial) growth. The breaking of the forward bias associated with the blocking region was 2 V. The minimum threshold current was 160 mA for 2.5 µm width of waveguide and 250 µm cavity length. \n </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1582824503077654785","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401591888"}],"foaf:name":[{"@value":"Seiji Uchiyama"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503077654787","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401591889"}],"foaf:name":[{"@value":"Kazunori Moriki"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503077654784","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401591890"}],"foaf:name":[{"@value":"Kenichi Iga"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503077654786","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401591891"}],"foaf:name":[{"@value":"Seijiro Furukawa"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"}],"prism:publicationName":[{"@value":"Japanese Journal of Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"1982-10-01","prism:volume":"21","prism:number":"10A","prism:startingPage":"L639"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.21.L639"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.21.L639/pdf"}],"createdAt":"2005-11-04","modifiedAt":"2022-11-29","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003446837996288","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"GaAs P-Layer Formation by Be Ion Implantation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360016869467071616","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Beryllium-ion implantation in InP and In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i>"}]},{"@id":"https://cir.nii.ac.jp/crid/1360016869736330112","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"<i>p</i>-<i>n</i> junction diodes in InP and In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> fabricated by beryllium-ion implantation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360016869736393728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Be-implanted (GaAl)As stripe geometry lasers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579820438040832","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"1.3 μm-wavelength mode controlled GaInAsP/InP etched laser"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871768128512","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1143/jjap.21.l639"},{"@type":"CIA","@value":"210000022258"},{"@type":"CROSSREF","@value":"10.1143/jjap.22.l470_references_DOI_a33rRUEZJZKQ3fFNSO5onky4G2x"},{"@type":"CROSSREF","@value":"10.1143/jjap.22.l473_references_DOI_a33rRUEZJZKQ3fFNSO5onky4G2x"}]}