著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hiroshi Ohta and Naomi Asai and Fumimasa Horikiri and Yoshinobu Narita and Takehiro Yoshida and Tomoyoshi Mishima,4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2019-04-16,58,SC,SCCD03,https://cir.nii.ac.jp/crid/1360566399836016256,https://doi.org/10.7567/1347-4065/ab0cfa