Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition

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Uniform ZnO epitaxial films were formed on 2-in.-diameter m-plane sapphire substrates by high-speed rotation-type mist chemical vapor deposition at atmospheric pressure, without using any vacuum equipment. The ZnO films were characterized by scanning electron microscopy, X-ray diffraction in θ–2θ and scanning modes, electron backscatter diffraction, and room-temperature photoluminescence measurements. Experimental results show that m-plane ZnO films were epitaxially grown on the m-plane sapphire substrates with high uniformity of not only thickness but also crystallinity and optical properties. These results will promote the progress of ZnO-based devices such as light-emitting diodes.

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