著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hiroyuki Kageshima and Hiroki Hibino and Hiroshi Yamaguchi and Masao Nagase,Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2011-09-01,50,9R,095601,https://cir.nii.ac.jp/crid/1360566399838670592,https://doi.org/10.7567/jjap.50.095601