Evaluation of the junction interface of the crystalline germanium heterojunction solar cells

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Published
2014-03-06
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.7567/jjap.53.04er12
Publisher
IOP Publishing

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<jats:p>A junction interface of hydrogenated amorphous silicon/crystalline germanium heterojunction solar cells that employ substrates of different crystalline orientations and PH<jats:sub>3</jats:sub> exposure interface treatment was evaluated. We confirmed that the degree of heteroepitaxial growth depends on the crystalline orientation and is suppressed by PH<jats:sub>3</jats:sub> exposure treatment. In addition, the PH<jats:sub>3</jats:sub> exposure treatment forms a depletion layer near the interface in the crystalline germanium substrate. The heteroepitaxial growth and depletion layers have a great effect on the solar cell performance. Accordingly, a conversion efficiency of 6.54% was obtained by optimizing the interface properties.</jats:p>

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