著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hiroshi Ohta and Kentaro Hayashi and Fumimasa Horikiri and Michitaka Yoshino and Tohru Nakamura and Tomoyoshi Mishima,5.0 kV breakdown-voltage vertical GaN p–n junction diodes,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2018-02-23,57,4S,04FG09,https://cir.nii.ac.jp/crid/1360566399845001728,https://doi.org/10.7567/jjap.57.04fg09