Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

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Published
2013-01
Resource Type
journal article
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  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/j.jcrysgro.2011.12.084
Publisher
Elsevier BV

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Abstract With an aim to achieve compressively strained Si in which low hole effective mass is expected, investigations on growth of compressively strained Si/Si1−xCx/Si(100) heterostructure were carried out using gas-source molecular beam epitaxy (MBE). It was found that crystalline morphology and lattice strain strongly depends on substrate temperature. The compressively-strained Si with smooth surface was successfully realized at 550 °C. It was found that dislocation is preferentially introduced and precipitations of carbon-related phases are less-pronounced at this substrate temperature. The obtained strain in the top Si layer was in the range of −0.6% to −0.7%, which is expected to be adequate for realization of low hole effective mass.

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