Electrical detection of ppb region NO<sub>2</sub> using Mg-porphyrin-modified graphene field-effect transistors

DOI Web Site 被引用文献3件 参考文献55件
  • Takashi Ikuta
    Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan
  • Takashi Tamaki
    Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1, Komaba, Meguro-ku, Tokyo 153-8902, Japan
  • Hiroshi Masai
    Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1, Komaba, Meguro-ku, Tokyo 153-8902, Japan
  • Ryudai Nakanishi
    Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan
  • Kitaro Endo
    Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan
  • Jun Terao
    Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1, Komaba, Meguro-ku, Tokyo 153-8902, Japan
  • Kenzo Maehashi
    Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan

説明

<jats:p>The Mg-porphyrin-modified graphene FETs showed NO<jats:sub>2</jats:sub> detection at a low concentration of ppb order at room temperature and are highly selective toward NO<jats:sub>2</jats:sub>.</jats:p>

収録刊行物

  • Nanoscale Advances

    Nanoscale Advances 3 (20), 5793-5800, 2021

    Royal Society of Chemistry (RSC)

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