著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
G.A. Antypas and J. Edgecumbe,"Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy",Journal of Crystal Growth,0022-0248,Elsevier BV,1976-06,34,1,132-138,https://cir.nii.ac.jp/crid/1360576122702507520,https://doi.org/10.1016/0022-0248(76)90271-2