著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tsung-Yung Jonathan Chang and Yen-Huei Chen and Wei-Min Chan and Hank Cheng and Po-Sheng Wang and Yangsyu Lin and Hidehiro Fujiwara and Robin Lee and Hung-Jen Liao and Ping-Wei Wang and Geoffrey Yeap and Quincy Li,A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> <sub>MIN</sub> Applications,IEEE Journal of Solid-State Circuits,0018-9200,Institute of Electrical and Electronics Engineers (IEEE),2021-01,56,1,179-187,https://cir.nii.ac.jp/crid/1360579820066611968,https://doi.org/10.1109/jssc.2020.3034241