{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360580235495367296.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.rinp.2021.104167"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S2211379721003168?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S2211379721003168?httpAccept=text/plain"}}],"dc:title":[{"@value":"MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380580235495367301","@type":"Researcher","foaf:name":[{"@value":"Armando Hernandez"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367297","@type":"Researcher","foaf:name":[{"@value":"Md Minhazul Islam"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367300","@type":"Researcher","foaf:name":[{"@value":"Pooneh Saddatkia"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367307","@type":"Researcher","foaf:name":[{"@value":"Charles Codding"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367302","@type":"Researcher","foaf:name":[{"@value":"Prabin Dulal"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367296","@type":"Researcher","foaf:name":[{"@value":"Sahil Agarwal"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367305","@type":"Researcher","foaf:name":[{"@value":"Adam Janover"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367304","@type":"Researcher","foaf:name":[{"@value":"Steven Novak"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367306","@type":"Researcher","foaf:name":[{"@value":"Mengbing Huang"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367298","@type":"Researcher","foaf:name":[{"@value":"Tuoc Dang"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367299","@type":"Researcher","foaf:name":[{"@value":"Mike Snure"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580235495367303","@type":"Researcher","foaf:name":[{"@value":"F.A. Selim"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"22113797"}],"prism:publicationName":[{"@value":"Results in Physics"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2021-06","prism:volume":"25","prism:startingPage":"104167"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/","https://www.elsevier.com/legal/tdmrep-license","http://creativecommons.org/licenses/by/4.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S2211379721003168?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S2211379721003168?httpAccept=text/plain"}],"createdAt":"2021-04-23","modifiedAt":"2025-10-31","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360017282447250944","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Atomic precision manufacturing of carbon nanotube—a perspective"}]},{"@id":"https://cir.nii.ac.jp/crid/1390864869326193792","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Growth of Gallium Oxide Thin Films on Quartz Substrates Using Mist Chemical Vapor Deposition for Deep Ultraviolet Photodetectors"},{"@language":"ja","@value":"深紫外光検出器を目指した酸化ガリウム薄膜の水晶基板上ミストＣＶＤ成長"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.rinp.2021.104167"},{"@type":"CROSSREF","@value":"10.1088/2631-7990/ac5f11_references_DOI_TTkLEqlFeDK33h0etUZlyOWN8xE"},{"@type":"CROSSREF","@value":"10.2472/jsms.73.778_references_DOI_TTkLEqlFeDK33h0etUZlyOWN8xE"}]}