{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360580240184812800.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/smll.201803465"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fsmll.201803465"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201803465"}}],"dc:title":[{"@value":"High‐Performance Wafer‐Scale MoS<sub>2</sub> Transistors toward Practical Application"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>Atomic thin transition‐metal dichalcogenides (TMDs) are considered as an emerging platform to build next‐generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS<jats:sub>2</jats:sub> islands to improve device performance is proposed. A four‐probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML‐MoS<jats:sub>2</jats:sub> islands. Based on such continuous MoS<jats:sub>2</jats:sub> films synthesized on a 2 in. insulating substrate, a top‐gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (<jats:italic>V</jats:italic>\n<jats:sub>T</jats:sub>) and field effect mobility (μ<jats:sub>FE</jats:sub>) for hundreds of MoS<jats:sub>2</jats:sub> FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ<jats:sub>FE</jats:sub> of 70 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> and subthreshold swing of about 150 mV dec<jats:sup>−1</jats:sup> are extracted from these MoS<jats:sub>2</jats:sub> FETs, which are comparable to the best top‐gated MoS<jats:sub>2</jats:sub> FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D‐TMDs into functional systems and paves the way for the future development of 2D‐TMDs integrated circuits.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380580240184812803","@type":"Researcher","foaf:name":[{"@value":"Hu Xu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812813","@type":"Researcher","foaf:name":[{"@value":"Haima Zhang"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812805","@type":"Researcher","foaf:name":[{"@value":"Zhongxun Guo"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812802","@type":"Researcher","foaf:name":[{"@value":"Yuwei Shan"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Surface Physics Key Laboratory of Micro and Nano Photonic Structures (MOE) Physics Department Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812800","@type":"Researcher","foaf:name":[{"@value":"Shiwei Wu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Surface Physics Key Laboratory of Micro and Nano Photonic Structures (MOE) Physics Department Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812807","@type":"Researcher","foaf:name":[{"@value":"Jianlu Wang"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science  500 Yutian Road Shanghai 200083 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812806","@type":"Researcher","foaf:name":[{"@value":"Weida Hu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science  500 Yutian Road Shanghai 200083 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812808","@type":"Researcher","foaf:name":[{"@value":"Hanqi Liu"}],"jpcoar:affiliationName":[{"@value":"Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Department of Chemistry Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812812","@type":"Researcher","foaf:name":[{"@value":"Zhengzong Sun"}],"jpcoar:affiliationName":[{"@value":"Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Department of Chemistry Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812814","@type":"Researcher","foaf:name":[{"@value":"Chen Luo"}],"jpcoar:affiliationName":[{"@value":"Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal University  500 Dongchuan Road Shanghai 200241 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812809","@type":"Researcher","foaf:name":[{"@value":"Xing Wu"}],"jpcoar:affiliationName":[{"@value":"Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal University  500 Dongchuan Road Shanghai 200241 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812810","@type":"Researcher","foaf:name":[{"@value":"Zihan Xu"}],"jpcoar:affiliationName":[{"@value":"Shenzhen 6 Carbon Technology  Shenzhen 518106 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812811","@type":"Researcher","foaf:name":[{"@value":"David Wei Zhang"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812801","@type":"Researcher","foaf:name":[{"@value":"Wenzhong Bao"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380580240184812804","@type":"Researcher","foaf:name":[{"@value":"Peng Zhou"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of ASIC and System School of Microelectronics Fudan University  Shanghai 200433 China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"16136810"},{"@type":"EISSN","@value":"16136829"}],"prism:publicationName":[{"@value":"Small"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2018-10-16","prism:volume":"14","prism:number":"48"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fsmll.201803465"},{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201803465"}],"createdAt":"2018-10-17","modifiedAt":"2023-09-15","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360298757202326656","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancing optical characteristics of mediator-assisted wafer-scale MoS<sub>2</sub> and WS<sub>2</sub> on 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