Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells
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- Yoshiya Iwata
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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- Takao Oto
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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- David Gachet
- Attolight AG, EPFL Innovation Park, Building D, CH-1015 Lausanne, Switzerland
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- Ryan G. Banal
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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- Mitsuru Funato
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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- Yoichi Kawakami
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 117 (11), 115702-, 2015-03-21
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360846642033382144
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- ISSN
- 10897550
- 00218979
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- データソース種別
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- Crossref
- KAKEN