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An Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Films
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Description
<jats:p> Evaporated Ge films were used as antenna-coupled point-contact warm carrier devices. The carrier mobilities of the deposited films increased with the increase of the substrate temperature and showed 10-100 cm<jats:sup>2</jats:sup>/V·s for the films deposited above 300°C. A CO<jats:sub>2</jats:sub> laser signal was detected by the point-contact devices fabricated from those films. This indicated the potential of the realization of antenna-coupled thin-film warm carrier devices. </jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 27 (8R), 1437-, 1988-08-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360847871769372800
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- NII Article ID
- 210000026405
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles