Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface

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Published
1991-08-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.30.1591
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IOP Publishing

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<jats:p> The behavior of Si(100) surface defects induced by Fe contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour and a subsequent heat treatment at 850°C for 2 hours, Fe-containing precipitates were observed in Si substrate in close vicinity to the interface of Si and SiO<jats:sub>2</jats:sub> formed during the annealing. One of these precipitates is identified as FeSi-type silicide. In addition, the inclusions which were confirmed to be Fe<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> or γ-Fe<jats:sub>2</jats:sub>SiO<jats:sub>4</jats:sub> were observed in the surface thermal SiO<jats:sub>2</jats:sub> layer. These results demonstrate that Fe atoms diffuse into the Si substrate during annealing at 1150°C and precipitate at a Si/SiO<jats:sub>2</jats:sub> interface, while Fe atoms left on the surface form inclusions in the surface SiO<jats:sub>2</jats:sub> layer. Under an additional thermal oxidation at 1000°C, oxidation-induced stacking faults were formed. They were not decorated at all in contrast with those induced by Cu or Ni contamination. </jats:p>

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