Fabrication of 780-nm AlGaAs Tunable Distributed Bragg Reflector Laser Diodes by Using Compositional Disordering of a Quantum Well

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Published
1991-12-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.30.3410
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IOP Publishing

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<jats:p> AlGaAs tunable distributed Bragg reflector (DBR) laser diodes (LD's) with a lasing wavelength of 780 nm were fabricated by means of electron beam (EB) lithography, ion implantation, and two-step metalorganic vapor phase epitaxy (MOVPE). Active and passive waveguides were monolithically integrated by using silicon ion implantation for compositional disordering of quantum-well heterostructures. The optimum single-quantum-well (SQW) structure, with low threshold current and low internal loss, is about 5 nm thick and has an Al mole fraction of 0.06. The graded-index separate-confinement heterostructure (GRIN-SCH) with a carrier-blocking layer was also used to improve the characteristic temperature of a two-step-growth LD. A Iinewidth as narrow as 690 kHz and a frequency tuning of more than 1.7 THz were obtained. </jats:p>

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