InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si

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Published
1991-12-01
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.30.3815
Publisher
IOP Publishing

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<jats:p> The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 µm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup> and 700 Å, respectively.) The characteristics of the DHBT on Si with the 4-µm buffer layer are comparable to those of transistors on InP substrates. </jats:p>

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