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The transistor with an InP buffer layer thickness of 4 µm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup> and 700 Å, respectively.) The characteristics of the DHBT on Si with the 4-µm buffer layer are comparable to those of transistors on InP substrates. \n 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