書誌事項
- 公開日
- 1991-12-01
- 権利情報
-
- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
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- 10.1143/jjap.30.3815
- 公開者
- IOP Publishing
この論文をさがす
説明
<jats:p> The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 µm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup> and 700 Å, respectively.) The characteristics of the DHBT on Si with the 4-µm buffer layer are comparable to those of transistors on InP substrates. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (12S), 3815-, 1991-12-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871771010304
-
- NII論文ID
- 210000030953
-
- ISSN
- 13474065
- 00214922
-
- データソース種別
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