著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Shutaro Asanuma and Hisashi Shima and Masashi Yamazaki and Kazumi Hayama and Nobuhiro Hata and Hiroyuki Akinaga,Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO<sub>2</sub>/TiN/Ti/SiO<sub>2</sub>/Si resistive switching devices,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2015-03-19,54,4S,04DD10,https://cir.nii.ac.jp/crid/1360847874819992064,https://doi.org/10.7567/jjap.54.04dd10