著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Takeshi Ohshima and Takashi Yokoseki and Koichi Murata and Takuma Matsuda and Satoshi Mitomo and Hiroshi Abe and Takahiro Makino and Shinobu Onoda and Yasuto Hijikata and Yuki Tanaka and Mikio Kandori and Shuichi Okubo and Toru Yoshie,Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2015-10-29,55,1S,01AD01,https://cir.nii.ac.jp/crid/1360847874820416640,https://doi.org/10.7567/jjap.55.01ad01