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The drain current–gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current–gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1582543028093068674","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000402033276"}],"foaf:name":[{"@value":"Takashi 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