著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
W. He and S. L. Lu and D. S. Jiang and J. R. Dong and A. Tackeuchi and H. Yang,Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium,Journal of Applied Physics,0021-8979,AIP Publishing,2012-07-15,112,2,,https://cir.nii.ac.jp/crid/1360848658834444800,https://doi.org/10.1063/1.4737611