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Broadband near-infrared emission from bismuth-doped multilayer films
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- Satoshi Morimoto
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
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- Minoru Fujii
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
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- Hong-Tao Sun
- International Center for Young Scientists, National Institute for Materials Science (NIMS) 2 , Tsukuba, Ibaraki 305-0047, Japan
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- Yuji Miwa
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
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- Kenji Imakita
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
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- Jianrong Qiu
- Institute of Optical Communication Materials, South China University of Technology 3 , Guangzhou 510640, China
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- Shinji Hayashi
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
Bibliographic Information
- Published
- 2012-10-01
- Resource Type
- journal article
- DOI
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- 10.1063/1.4757579
- Publisher
- AIP Publishing
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Description
<jats:p>Multilayer structures consisting of bismuth (Bi)-doped silica thin films and different kinds of spacer, i.e., Si, silica, Si-rich silica, layers are grown and the luminescence properties are studied. When samples were annealed at a low temperature, Bi-related near infrared active centers (BRACs) were formed at interfaces between Bi-doped silica and Si-rich silica (or silicon) due to the reduction of Bi3+ to BRACs by silicon. On the other hand, films annealed at a high temperature showed similar emission behaviors to bulk glasses. The results demonstrated here establish a new strategy for the control of BRACs and building peculiar Bi activated film structures.</jats:p>
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 112 (7), 073511-, 2012-10-01
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360848658835290496
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- ISSN
- 10897550
- 00218979
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- Article Type
- journal article
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- Data Source
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- Crossref
- KAKEN
- OpenAIRE
