Broadband near-infrared emission from bismuth-doped multilayer films

DOI PDF 被引用文献1件 参考文献25件
  • Satoshi Morimoto
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
  • Minoru Fujii
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
  • Hong-Tao Sun
    International Center for Young Scientists, National Institute for Materials Science (NIMS) 2 , Tsukuba, Ibaraki 305-0047, Japan
  • Yuji Miwa
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
  • Kenji Imakita
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan
  • Jianrong Qiu
    Institute of Optical Communication Materials, South China University of Technology 3 , Guangzhou 510640, China
  • Shinji Hayashi
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , Rokkodai, Nada, Kobe 657-8501, Japan

書誌事項

公開日
2012-10-01
資源種別
journal article
DOI
  • 10.1063/1.4757579
公開者
AIP Publishing

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説明

<jats:p>Multilayer structures consisting of bismuth (Bi)-doped silica thin films and different kinds of spacer, i.e., Si, silica, Si-rich silica, layers are grown and the luminescence properties are studied. When samples were annealed at a low temperature, Bi-related near infrared active centers (BRACs) were formed at interfaces between Bi-doped silica and Si-rich silica (or silicon) due to the reduction of Bi3+ to BRACs by silicon. On the other hand, films annealed at a high temperature showed similar emission behaviors to bulk glasses. The results demonstrated here establish a new strategy for the control of BRACs and building peculiar Bi activated film structures.</jats:p>

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