Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

詳細情報 詳細情報について

• CRID

  1360855570141181568

• DOI

  10.1016/j.mee.2007.07.012

• ISSN

  01679317

• Web Site

  https://api.elsevier.com/content/article/PII:S0167931707006478?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0167931707006478?httpAccept=text/plain

• データソース種別

  • Crossref