著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
C.K. Park and H.T. Kim and C.H. Lee and N.E. Lee and Hyungsoo Mok,Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas,Microelectronic Engineering,0167-9317,Elsevier BV,2008-02,85,2,375-387,https://cir.nii.ac.jp/crid/1360855570141181568,https://doi.org/10.1016/j.mee.2007.07.012