著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
S. Ahmed and C. J. Barbero and T. W. Sigmon and J. W. Erickson,Empirical depth profile simulator for ion implantation in 6Hα-SiC,Journal of Applied Physics,0021-8979,AIP Publishing,1995-06-15,77,12,6194-6200,https://cir.nii.ac.jp/crid/1360857597320951168,https://doi.org/10.1063/1.359146