Empirical depth profile simulator for ion implantation in 6Hα-SiC

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  • S. Ahmed
    Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Portland, Oregon 97291
  • C. J. Barbero
    Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Portland, Oregon 97291
  • T. W. Sigmon
    Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Portland, Oregon 97291
  • J. W. Erickson
    Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, California 94063

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<jats:p>Silicon carbide is a semiconductor material suitable for a variety of specialized devices. Implantation profiles of 30–300 keV B, Al, N, and As in 6Hα-SiC are reported. The profiles, measured by secondary-ion-mass spectrometry, are fit with Pearson-IV curves which require knowledge of the first four moments of the distribution. The moments of the impurity distributions are extracted from the experimental data and fit to simple functions of the ion energies. Thus, an accurate implantation depth profile simulator, based on experimental data for the common dopants in 6Hα-SiC, is developed. This method results in a more accurate implant simulator than is obtained using conventional first-principles calculations, primarily due to channeling considerations.</jats:p>

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