Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into silicon

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  • T. I. Kamins
    Hewlett-Packard Laboratories, Palo Alto, California 94304
  • S. Y. Chiang
    Hewlett-Packard Laboratories, Palo Alto, California 94304

Bibliographic Information

Published
1985-10-01
DOI
  • 10.1063/1.335910
Publisher
AIP Publishing

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<jats:p>Gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated. Cr tends to segregate to the surface Si-SiO2 interface; only a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.</jats:p>

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